Role of n-type seed-layers in microstructural evolution of intrinsic nanocrystalline silicon and solar cell performance

Elimination of the defect-rich amorphous region within the i-layer by depositing the nc-Si:H solar cells on highly crystalline seed-layer caused significant improvements in the short circuit current density (Jsc) and fill factor (FF). This is mainly due to the enhancement of long-wavelength light response and extraction efficiency of photo-carrier charges. The nc-Si:H solar cells prepared on a highly crystalline seed-layer (Xcn=73%) exhibited a 65.6% higher conversion efficiency than those on the n-type amorphous layers (Xcn=0%).