| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786466 | Current Applied Physics | 2013 | 4 Pages |
•Flexible IGZO TFT using Y2O3/TiO2/Y2O3 dielectric has been fabricated successfully at RT.•This flexible TFT features small gate swing of 0.16 V/decade and high mobility of 40 cm2/V.•Such good performance is contributed by improved gate stack structure and channel thickness modulation.
We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm2/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation.
