| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786499 | Current Applied Physics | 2013 | 4 Pages |
We fabricated high quality epitaxial Bi0.9Ho0.1FeO3 thin films which exhibited the tetragonally stained structure with a c/a ratio of about 1.04. The Bi0.9Ho0.1FeO3 thin film showed a good ferroelectric property with the high remanent polarization (Pr) of about 80 μC/cm2. The ferromagnetic hysteresis loop with a clear remanent magnetization was shown. The coercive field and the remanent magnetization of the Bi0.9Ho0.1FeO3 film are 6200 Oe and 1.7 emu/g, respectively. The abrupt conduction due to space charge limited (SCL) was revealed in leakage current density versus electric field.
► High quality epitaxial Bi0.9Ho0.1FeO3 thin films exhibits the tetragonally stained structure with a c/a ratio of about 1.04. ► Bi0.9Ho0.1FeO3 has a good ferroelectric property with the high remanent polarization (Pr) of about 80 μC/cm2. ► The coercive field and the remanent magnetization of the Bi0.9Ho0.1FeO3 film are 6200 Oe and 1.7 emu/g. ► The abrupt conduction due to space charge limited (SCL) was revealed in leakage current density versus electric field.
