| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786506 | Current Applied Physics | 2013 | 5 Pages |
We report patterned horizontal growth of ZnO nanowires on SiO2 surface for the study of electrical and luminescent characteristics of individual nanowires and for device applications. Patterns of gold catalytic seed islands with barrier layers which suppress vertical growth were employed to facilitate horizontal growth on SiO2 surface. After the growth, ZnO nanowire devices are fabricated by patterning electrodes aligned over the seed islands and their device characteristics are investigated. We could also investigate history of synthesis conditions by obtaining local luminescence characteristics along individual nanowires.
► Horizontal growth of ZnO nanowires on patterned seed islands on SiO2 surface. ► Deterministic fabrication of ZnO nanowire field effect transistors. ► Local luminescence characterizations of individual ZnO nanowires for full length. ► Differences along the length of individual ZnO nanowires were found.
