| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786561 | Current Applied Physics | 2012 | 5 Pages |
The electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with emission wavelengths of 429–467 nm were investigated. The optical output increased with increasing emission wavelength, which is attributed to the enhanced quantum confinement effect as a result of indium composition fluctuation. With higher indium content, the LEDs exhibited unfavorable performance, including a larger efficiency droop, spectral blueshift, and spectral broadening, due to indium-induced strains. The effect of heterointerfaces associated with the indium content of the active region on the device resistance was negligible.
► The electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with emission wavelengths of 429–467 nm were investigated. ► The optical output increased with increasing emission wavelength, which is attributed to the enhanced quantum confinement effect as a result of indium composition fluctuation. ► With higher indium content, the LEDs exhibited unfavorable performance, including a larger efficiency droop, spectral blueshift, and spectral broadening, due to indium-induced strains.
