Article ID Journal Published Year Pages File Type
1786618 Current Applied Physics 2013 4 Pages PDF
Abstract
► Al/HfO2/Au nc/SiO2/Si NFGM MOSCAP structure was studied. ► Multi-level storage through a stepped control oxide (HfO2) was attempted. ► Multi-level characteristics were confirmed by C-V measurement. ► Memory window and trap voltages were predicted by theoretical calculation. ► The major device parameters were consistent with the predicted values.
Keywords
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Preview
Design of control oxide thickness for multi-level storage in a stepped NFGM MOSCAP
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