Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1786618 | Current Applied Physics | 2013 | 4 Pages |
Abstract
⺠Al/HfO2/Au nc/SiO2/Si NFGM MOSCAP structure was studied. ⺠Multi-level storage through a stepped control oxide (HfO2) was attempted. ⺠Multi-level characteristics were confirmed by C-V measurement. ⺠Memory window and trap voltages were predicted by theoretical calculation. ⺠The major device parameters were consistent with the predicted values.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ji-Young Kim, Jun-Hyuk Seo, Young-Woong Moon, Duck-Kyun Choi,