Top-emitting organic light-emitting devices based on silicon substrate using Delta -doping technique

We have fabricated a Top-emitting organic light-emitting device on silicon substrate Delta -doping technique. Using ultrathin quinacridone as emitting layer, the performance of Top-emitting organic light-emitting device is improved obviously. However, when increasing the thickness of the anode, the performance of device is enhanced dramatically. The max power efficiency of device is 5.9 Lm/W at 5 V corresponding to the current efficiency of 9.3 cd/A. The max current efficiency of device is also increases to 11 cd/A at 7 V.