Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1786662 | Current Applied Physics | 2011 | 4 Pages |
Abstract
We report on the growth of NiSi2-catalyzed amorphous SiO2 nanowires by rapid-thermal-annealing of Ni(40 nm)/poly-Si(60 nm)/SiO2(110 nm)/undoped Si substrate structures at 900 °C in N2 ambient. The diameter of the nanowires is dependent on the diameter of the NiSi2 catalyst particles; the former is about 16–45% smaller than the later. Considering the presence of the nanoparticles located at the tip of the nanowires, the growth behavior of the a-SiO2 nanowires is described in terms of the generation of SiO vapor and the VLS mechanism.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jin-Bok Lee, Chel-Jong Choi, Tae-Yeon Seong,