| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786696 | Current Applied Physics | 2013 | 6 Pages |
We investigated the resistance switching (RS) effect of metal/Nb-doped SrTiO3 interfaces under different treating conditions. Two types of I–V characteristics appeared due to the modification of Schottky-like barrier and the formation of insulating layer. According to X-ray photoelectron spectroscopy analysis, the change in interface potential barrier was contributed to the migration of oxygen vacancies and electrons trapping/detrapping of carriers in the vicinity of interface. Nonlinear fitting is applied to the curves to study the conduction mechanism of metal/NSTO. For “barrier height” style, Schottky emission and Poole–Frenkel (P–F) emission are dominating; for “insulating layer” style, space-charge-limited current, controls the conduction.
► We fabricated metal/NSTO junctions by modify metal probe and annealing atmosphere. ► Two types of I–V characteristics appeared and discussed respectively. ► Possible reasons for changes in interface potential barrier were given. ► Mechanism of metal/NSTO for metal/NSTO junctions has been proposed.
