| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1786783 | Current Applied Physics | 2013 | 4 Pages |
The carrier mobility of sputter-deposited Al-doped ZnO transparent-conducting (ZnO:Al) thin films was controlled between 22 and 48 cm2/Vs by varying the ZnO:Al seed layer. The statistical distribution of the [001] grain misorientation was characterized from the X-ray diffraction rocking curve in the range from 0.043 (2.5°) to 0.179 rad (10.2°). The grain-boundary energy barriers (Eb) from Seto's model [1] clearly exhibit linear dependence on the grain-boundary misorientation angle (ω) according to the equation Eb = 78 ± 4 + 173 ± 32 ω meV.
► Carrier mobility of TCO is straightforwardly controlled by the seed-layer variation. ► The grain misorientation is in the range from 0.043 (2.5°) to 0.179 rad (10.2°). ► Transport energy barrier clearly exhibits linear dependence on the misorientation.
