Article ID Journal Published Year Pages File Type
1786784 Current Applied Physics 2013 6 Pages PDF
Abstract
► We present a novel SiGe-on-insulator MOSFET with modified channel band energy. ► The key idea in this work is to modify the band energy in the channel. ► We have employed graded Ge composition profile in the channel. ► The proposed structure exhibit excellent properties and better reliability.
Keywords
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Preview
A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement
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