Continuous wave laser dopant activation of ion doped poly-Si films

Ion doping effect on low temperature poly-Si films has been investigated to suggest CW laser dopant activation as an alternative to conventional thermal annealing. The poly-Si films were ion doped with various B2H6/H2 or PH3/H2 plasma ion doses at an acceleration voltage of 16 kV, a RF of 13.56 MHz, and a RF power of 20 W. Then, the dopant activation was carried out by laser scan or conventional thermal annealing. The properties of ion doped poly-Si were examined by sheet resistance measurement and Raman spectroscopy. The sheet resistance of the ion doped poly-Si after laser dopant activation is sufficiently low compared to the value measured after the thermal annealing. EBSD was also examined to clarify grain boundary condition.