Hydrogenated amorphous silicon film as intrinsic passivation layer deposited at various temperatures using RF remote-PECVD technique

Hydrogenated amorphous silicon (a-Si:H) thin films as passivation layer are deposited at various substrate temperatures using the remote-plasma-enhanced chemical vapor deposition method. Their properties are investigated and a method for further improvement is explored. The highest effective carrier lifetime as 850 μs is obtained at optimal deposition temperature of 250 °C. Moreover, the further improvement is found after thermal annealing treatment at 250 °C for 20 s. A combination of the optimal deposition conditions for a-Si:H film and annealing treatment provides excellent surface and bulk passivation.