Effects of O2 plasma pre-treatment on ZnO thin films grown on polyethersulfone substrates at various deposition temperatures by atomic layer deposition

ZnO thin films were deposited on polyethersulfone (PES) substrates by atomic layer deposition (ALD). We investigated the effects of O2 plasma substrate pre-treatment power for various deposition temperatures from 100 °C to 250 °C. X-ray diffraction (XRD) measurements revealed that the ZnO thin films prefer c-axis orientation when the deposition temperature is increased. In addition, the structural properties of ZnO thin films varied with plasma pre-treatment power.