Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol–gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm2 V−1 s−1, 0.94 V/decade, 3.13 V, and >106, respectively.