Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1787085 | Current Applied Physics | 2012 | 6 Pages |
Abstract
⺠SBDs with/out Bi2O3-doped PVA were fabricated and measured at room temperature. ⺠Bi2O3-doped PVA layer affected main electrical parameters positively. ⺠Nss values without series resistance (Rs) are lower than those with Rs. ⺠Existence of Bi2O3-doped PVA layer decreased leakage current in SBDs. ⺠Existence of Bi2O3-doped PVA layer also decreased density of interface states.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Gökçen, T. Tunç, Å. Altındal, İ. Uslu,