Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1787161 | Current Applied Physics | 2009 | 4 Pages |
Abstract
Nanostructured Zn1−xMnxS films (0 ⩽ x ⩽ 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2 × 10−6 m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young’s modulus value ranging 69.7–94.2 GPa.
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Authors
D. Sreekantha Reddy, B. Kang, S.C. Yu, Y. Dwarakanadha Reddy, S.K. Sharma, K.R. Gunasekhar, K.N. Rao, P. Sreedhara Reddy,