Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1787180 | Current Applied Physics | 2009 | 8 Pages |
Abstract
Young’s modulus (E) and Poisson’s ratio (ν) are dependent upon the direction on the silicon surface. In this work, E and ν of silicon have been calculated analytically for any crystallographic direction of silicon by using compliance coefficients (s11, s12, and s44), and the values of E are confirmed experimentally by using a “beam deflection” method with a four-point bending fixture. Experimental results for E as a function of temperature from −150 °C to +150 °C are presented for (0 0 1) and (1 1 1) silicon wafers.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Chun-Hyung Cho,