Characterization of Young’s modulus of silicon versus temperature using a “beam deflection” method with a four-point bending fixture

Young’s modulus (E) and Poisson’s ratio (ν) are dependent upon the direction on the silicon surface. In this work, E and ν of silicon have been calculated analytically for any crystallographic direction of silicon by using compliance coefficients (s11, s12, and s44), and the values of E are confirmed experimentally by using a “beam deflection” method with a four-point bending fixture. Experimental results for E as a function of temperature from −150 °C to +150 °C are presented for (0 0 1) and (1 1 1) silicon wafers.