Large-scale: Synthesis, microstructure, and FT-IR property of SiC nanowires

Large-scale SiC nanowires have been synthesized via reacting silicon powder with carbon powder using Ni2O3 as catalyst by simple chemical vapor deposition method. The mixed powders were heated in an alumina horizontal tube furnace up to 1350 °C for 1 h in an argon atmosphere. Characterization by scanning electron microscope, transmission electron microscope, and X-ray diffractometer indicated that the nanowires covered with a thin layer of amorphous SiOx. The 3C–SiC nanowires were formed by vapor–liquid–solid growth mechanism and they have diameters of about 20–90 nm. The result of FT-IR spectrum shows the nanowires were composed of SiC and amorphous of silicon oxide.