Non-metallic element (chlorine) doped Zinc oxide grown by pulsed laser deposition for application in transparent electrode

Chlorine (Cl) doped ZnO thin films are grown using Pulsed Laser Deposition (PLD) to conduct a feasibility study for the possible application of this material as transparent conducting electrode (TCO) in transparent electrodes. Cl doped ZnO films are deposited on c-plane (0001) sapphire (Al2O3) and glass substrates at 100 °C using two Cl doped ZnO targets with chlorine concentrations 1.4 at% and 2.4 at% respectively. Optical properties studied using UV–visible spectrometer indicates that Cl doped ZnO samples have 90% average transmittance in the visible region. A carrier concentration of-4.04 × 1020 cm−3, resistivity of 6.344 × 10−4 Ω cm and sheet resistance of 34.3 Ω/sq at room temperature are derived from Hall measurements and four probe measurements carried out on ZnO:Cl (2.4 at%) thin films. The reports indicate a better transparency and conductance in ZnO compared to similar reports on ZnO published elsewhere. Therefore, Cl doped ZnO is a possible potential TCO alternative for application as transparent electrodes in optoelectronics.

► Transparent conducting oxide(TCO) with non-metallic in ZnO. Average transmittance of over 90% achieved. ► ZnO:Cl grown by pulsed laser deposition is found have to better properties than similar ZnO based work published elsewhere. ► High carrier concentration and high conductivity achieved. ► Even samples grown on glass substrate has good TCO property making this a suitable candidate for TCO application.