Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1787254 | Current Applied Physics | 2012 | 5 Pages |
Al doped ZnO (AZO) thin films with low electrical resistivity and high optical transmittance were successfully produced by inductively coupled plasma (ICP) assisted reactive DC magnetron sputtering at low deposition temperatures using a process control system. Although there was a hysteresis behavior during deposition, a stable process was achieved using the target voltage control method in the transition region. The electrical and optical properties of the AZO films deposited at various target voltages were measured. The AZO films showed a low electrical resistivity of ∼1 × 10−3 Ω cm and a high optical transmittance of ∼80% even on polymer substrates such as poly carbonate (PC) and poly ether sulfone (PES).
► ZnO:Al films were deposited by ICP assisted reactive DC magnetron sputtering. ► To stabilize the hysteresis behavior, target voltage control was used. ► The AZO films showed an electrical resistivity of ∼1 × 10−3 Ω cm. ► The AZO films showed an optical transmittance of ∼ 80 %. ► Polymer substrates, such as poly carbonate and poly ether sulfone, were used.