| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1787323 | Current Applied Physics | 2008 | 6 Pages |
Abstract
Within the framework of effective-mass approximation, exciton states confined in zinc-blende(ZB) InGaN/GaN quantum dot(QD) are investigated by means of a variational approach, considering finite band offsets. The ground-state exciton binding energy and the interband emission energy are investigated as functions of QD structural parameters in detail. Numerical results show clearly that both the QD size and In content of InGaN have a significant influence on the exciton states and interband optical transitions in the ZB InGaN/GaN QD.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Congxin Xia, Fengchn Jiang, Shuyi Wei,