Excitations in doped quantum dot induced by randomly fluctuating confinement potential: Influence of impurity

We explore the excitation profile of a repulsive impurity doped quantum dot. The dopant impurity potential chosen assumes Gaussian form. The quantum dot is subject to a randomly fluctuating confinement potential. The investigation reveals the interplay between the impurity strength, impurity location, and impurity domain to modulate the excitation rate. Owing to the interplay we encounter enhancement as well as depletion in the excitation rate as several impurity parameters are varied over a range. Phase space contours are often invoked to rationalize the findings.

► The excitation profile of quantum dot subject to randomly fluctuating confinement potential has been investigated. ► The quantum dot is doped with a repulsive Gaussian Impurity. ► The impurity strength, impurity domain, and impurity location delicately modulate the excitation profile. ► The findings could have important engineering applications.