Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1787518 | Current Applied Physics | 2013 | 4 Pages |
Abstract
An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (Ion/Ioff) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (Ion) of 421 μA/μm, Ion/Ioff of 1.2 × 1012 by design optimization in doping type of In0.53Ga0.47As channel at low gate (VGS) and drain voltages (VDS) of 0.5 V. Comparable performances are maintained at VDS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device.
Related Topics
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Authors
Kyung Rok Kim, Young Jun Yoon, Seongjae Cho, Jae Hwa Seo, Jung-Hee Lee, Jin-Hyuk Bae, Eou-Sik Cho, In Man Kang,