Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1787574 | Current Applied Physics | 2007 | 4 Pages |
Abstract
The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 × 109 Ω cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm2/V s and the electron trapping time is 4.6 μs. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
KiHyun Kim, SooYong Ahn, SeYoung An, JinKi Hong, Yun Yi, SunUng Kim,