Low-voltage driven carbon nanotube field emission lamp

CNTs were grown on a silicon substrate using the RAP process and PECVD system. The resulting CNT emitters showed the excellent field emission characteristics. For low-voltage driving field emitter fabrication, the CNTs were connected to the drain part of an external MOSFET. A low gate voltage of the MOSFET can control the field emission current of CNTs, instead of a high anode voltage. The emission current of CNTs controlled by the MOSFET was very stable in terms of both the current switching and the current stability of 100 h.