| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 178772 | Electrochemistry Communications | 2015 | 5 Pages |
•Sol–gel films were electrodeposited on p-type semi-conductors with the assistance of light irradiation.•The negative shift in potential and the increase in light intensity facilitate the deposition of sol–gel films.•Surface patterning was achieved with the aid of a laser on this type substrate.
A new approach for the deposition of sol–gel films on semiconducting substrate using photo-electrochemical technique is presented. The deposition is based on accelerating sol–gel condensation reaction by the catalyzing effect of electrochemically generated OH− ions when applying both negative potentials and light irradiation onto p-type semiconductors. Results show that both the negative shift in potential and the increase in light intensity facilitate the deposition kinetics of silica sol–gel films. Surface patterning is further achieved with the assistance of a laser.
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