| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1787893 | Current Applied Physics | 2012 | 7 Pages |
Diode currents of MOSFET were studied and characterized in detail for the ion implanted pn junction of short channel MOSFETs with shallow drain junction doping structure. The diode current in MOSFET junctions was analyzed on the point of view of the gate-induced-drain leakage (GIDL) current. We could found the GIDL current is generated by the band-to-band tunneling (BTBT) of electrons through the reverse biased channel-to-drain junction and had good agreement with BTBT equation. The effect of the lateral electric field on the GIDL current according to the body bias voltage is characterized and discussed. We measured the electrical doping profiling of MOSFETs with a short gate length, ultra thin oxide thickness and asymmetric doped drain structure and checked the profile had good agreement with simulation result. An accurate effective mobility of an asymmetric source–drain junction transistor was successfully extracted by using the split C–V technique.
► Comprehensive Electrical Characterization for MOSFETs with Asymmetric Source/Drain Junction Structure. ► Successful Extraction of Doping Profiling by Non-Destructive Electrical Vth Measurement Method. ► Extraction of Effective Mobility of Short Channel MOSFET with Asymmetric Junction by Split C–V Method. ► Confirm new GIDL Model for Source/Drain of MOSFET with Junction Doping Dependence.
