Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1787894 | Current Applied Physics | 2012 | 5 Pages |
Abstract
Ag/perylene-monoimide(PMI)/n-GaAs Schottky diode was fabricated and the current-voltage (I-V) characteristics at a wide temperature range between 75 and 350Â K and also the capacitance-voltage (C-V) characteristics at room temperature for 1Â MHz have been analyzed in detail. The measured I-V characteristics exhibit a good rectification behavior at all temperature values. By using standard analysis methods, the ideality factor and the barrier height are deduced from the experimental data and also the variations of these parameters with the temperature are analyzed. In addition, by means of the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the diode. Finally, capacitance-voltage characteristics of device have been analyzed at the room temperature. From analyzing the capacitance measurements, Schottky barrier height is determined and then compared with the value which calculated from the I-V measurements at room temperature. Also, the concentration of ionized donors, built-in potential and some other parameters of diode are found using C-V characteristics.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
N. ÅimÅir, H. Åafak, Ã.F. Yüksel, M. KuÅ,