Electrical characteristics of homoepitaxial p-GaSb analyzed by the p–n junction: A correction on the Hall parameter of heteroepitaxial p-GaSb/SI–GaAs

Electrical characteristics of p-GaSb are examined by applying the junction Hall effect measurement (JHEM) to homoepitaxially grown p-GaSb/n-GaSb layers, and analysis is made on the disagreement with those of an equivalent heteroepitial p-GaSb/semi-insulating (SI) GaAs. The photoluminescence spectra reveal that a large number of intrinsic defects are induced due to the lattice mismatch in p-GaSb/SI–GaAs, and the shallow donors of [SbGa] involved in the electrical conduction was significantly reduced in p-GaSb/n-GaSb. This proves that the homoepitaxial p-GaSb is quite different from the heteroepitaxial one in the electrical and the optical characteristics, and that the JHEM approach is correct in determining the Hall parameters of the epitaxial layers whose high-resistive substrates are not available.

► GaSb is a matrix of InAs/GaSb superlattice issuing in infrared photodetectors. ► The junction Hall effect is introduced for GaSb without high-resistive substrate. ► The Hall parameters of homoepitaxial p-GaSb are analyzed by the p–n junction. ► The [SbGa] defect is fairly reduced in lattice-matched homoepitaxial GaSb. ► Discrepancy between homo- and heteroepitaxial GaSb layers is discussed.