Growth of p-type ZnO thin film on n-type silicon substrate and its application as hybrid homojunction

A report on the preparation of p-type ZnO thin films, codoped with Al and N, on n-type Si (100) substrate by RF sputtering technique is presented. The as-grown films were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. ZnO homojunction was fabricated by growing a three-dimensional ZnO hybrid structure of p-type ZnO films, n-type ZnO nanowire and n-type Al-doped ZnO films in order. The current–voltage characteristics clearly showed a diode like rectifying behavior. Room temperature photoluminescence spectra showed dominant peak at 3.20 eV with a broad deep level emission. The electroluminescence spectrum of heterojunction structure exhibited deep level emission at 2.37 eV and ultraviolet emission at 3.20 eV when the injected current attained 100 mA.