Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1787981 | Current Applied Physics | 2006 | 4 Pages |
Abstract
The neutron irradiation effect of polycrystalline Si1âxMnx semiconductor thin films has been studied. The Si1âxMnx semiconductor thin films were grown on SiO2/(1 0 0)Si substrate at 400 °C by using a MBE. The as-grown specimens are irradiated by the fast neutrons of 0.82 MeV in a neutron research reactor at KAERI. After neutron irradiation, the electrical resistivities of neutron-irradiated specimens increase with the irradiation amount, while the saturation magnetizations decrease. Hall analysis reveals that the mobility of neutron-irradiated specimen decreases remarkably. The XRD and TEM analyses show that the phase transformation is not induced by the neutron irradiation.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Dhang Kwon, Young Eon Ihm, Seoung Won Lee, Dojin Kim, Hyojin Kim, Jae Min Sohn, Young Hwan Kang, Bong Goo Kim, Chang Soo Kim, Hyun Ryu, Sang Jun Oh,