| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1788032 | Current Applied Physics | 2009 | 4 Pages |
Abstract
Au/STO/p-Si/Au structure is fabricated using pulsed laser deposition technique at room temperature. The current–voltage (I–V) characteristics of the device show rectification behavior. Various junction parameters such as ideality factor, barrier height and series resistance is determined using conventional forward bias I–V characteristics, Cheung method and Norde’s function. Au/STO/p-Si/Au structure shows non-ideal diode characteristics with the value of ideality factor of ∼5.1 and barrier height of ∼0.40 eV.
Related Topics
Physical Sciences and Engineering
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Authors
R.K. Gupta, K. Ghosh, P.K. Kahol,