| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1788134 | Current Applied Physics | 2012 | 5 Pages |
In this study, we have newly developed titanium-indium oxide (TiInO) and titanium-indium zinc oxide (TiInZnO) thin films as the active channel layer in thin film transistors (TFTs) by the sol-gel process. The effects of adding Ti on TiInO and TiInZnO TFTs were investigated. The addition of Ti elements can suppress formation of oxygen vacancies because of the stronger oxidation tendency of Ti relative to that of Zn or In. TiInO and TiInZnO TFTs showed lower off currents and higher on/off current ratios than pure InO and InZnO TFTs. A TiInO TFT doped with 10.31 mol% Ti showed good performance with an on/off current ratio greater than 107, and a field-effect mobility of 1.91 cm2 V−1 S−1. A TiInZnO TFT doped with 2.92 mol % Ti showed an on/off current ratio greater than 106, and a field-effect mobility of 0.45 cm2 V−1 S−1.
