Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788155 | Current Applied Physics | 2010 | 4 Pages |
Abstract
Bottom-contact (BC) copper phthalocyanine (CuPc) thin film transistor with UV/ozone treated Au as a source/drain electrode was fabricated and the contact resistance was estimated from the transmission line method (TLM). Comparing the properties of OTFT with untreated Au electrode, the performance of the BC CuPc-TFT with the UV/ozone treated Au electrodes was significantly improved: saturation mobility increased from 4.69Â ÃÂ 10â3 to 2.37Â ÃÂ 10â2Â cm2/VÂ s, threshold voltage reduced from â29.1 to â6.4Â V, and threshold swing varied from 5.08 to 2.25Â V/decade. The contact resistance of the device with UV/ozone treated Au electrodes was nearly 20 times smaller than that of the device with untreated Au electrodes at the gate voltage of â20Â V. This result indicated that using the UV/ozone treated Au electrode is an effective method to reduce the contact resistance. The present BC configuration with UV/ozone treated Au electrodes could be a significant step towards the commercialization of OTFT technology.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jun Li, Liang Zhang, Xiao-Wen Zhang, Hao Zhang, Xue-Yin Jiang, Dong-bin Yu, Wen-Qing Zhu, Zhi-Lin Zhang,