| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1788254 | Current Applied Physics | 2011 | 4 Pages |
The comparative analyses of structural and electrical properties of Ag(Ta0.5Nb0.5)O3 and Ag(Ta0.8Nb0.2)O3 thick films have been investigated. Ag(Ta0.5Nb0.5)O3 and Ag(Ta0.8Nb0.2)O3 thick films have been prepared by screen printing method on the alumina substrates and sintered at 1150 °C and 1140 °C for 2 h, respectively, due to their different sintering temperature. The dielectric properties of Ag(Ta0.5Nb0.5)O3 and Ag(Ta0.8Nb0.2)O3 thick films were measured from 1 kHz to 1 MHz. The voltage dependent leakage current behavior of Ag(Ta0.5Nb0.5)O3 and Ag(Ta0.8Nb0.2)O3 thick films were investigated at the temperature range from 30 to 100 °C. The Ag(Ta0.5Nb0.5)O3 and Ag(Ta0.8Nb0.2)O3 thick films has negative temperature coefficient resistivity properties. The dielectric properties and ac conductivity have been investigated at temperature range from 30 to 120 °C with varying the frequencies (10 kHz–1 MHz). The activation energy for conduction process was calculated from the slope of ac conductivity.
