Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788281 | Current Applied Physics | 2011 | 4 Pages |
Abstract
Bi(Fe0.99Mn0.01)O3 thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrates by pulsed laser deposition at various deposition temperature, such as at 520 °C, 530 °C, and 540 °C, respectively. The film deposited at 540 °C exhibited better ferroelectric property such as large remnant polarization (2Pr = 139 μC/cm2) and low coercive field (2Ec = 630 kV/cm). However, high leakage current density was observed especially in a high electric field range. The improvements were attributed to the facts of highly (111)-preferred orientation and uniform large grain size when the film was deposited at 540 °C.
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Authors
M.H. Lee, J.S. Park, D.J. Kim, H.J. Cho, Y.S. Sung, M.-H. Kim, J.H. Cho, H.I. Choi, D. Do, W.-J. Kim, S.S. Kim, B.C. Choi, T.K. Song,