Article ID Journal Published Year Pages File Type
1788281 Current Applied Physics 2011 4 Pages PDF
Abstract

Bi(Fe0.99Mn0.01)O3 thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrates by pulsed laser deposition at various deposition temperature, such as at 520 °C, 530 °C, and 540 °C, respectively. The film deposited at 540 °C exhibited better ferroelectric property such as large remnant polarization (2Pr = 139 μC/cm2) and low coercive field (2Ec = 630 kV/cm). However, high leakage current density was observed especially in a high electric field range. The improvements were attributed to the facts of highly (111)-preferred orientation and uniform large grain size when the film was deposited at 540 °C.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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