Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788303 | Current Applied Physics | 2011 | 4 Pages |
Abstract
We investigate the role of the O-vacancy in ZnO. The vacancy is well-known to be rich in ZnO and the origin of the natural n-type conductivity. The electronic structure of the O-vacancy examined by the accurate GW calculations indicates that it is a deep donor. By considering the interactions between the O-vacancy and the other native point defects in O-deficient ZnO through density-functional theory calculations, the presence of O-vacancy induces the formation of Zn-interstitial which is a shallow donor. A quantum mechanical attractive interaction between the deep O-vacancy donor and the shallow Zn-interstitial donor, which comes from the electronic orbital hybridization, is discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M.S. Kim, Yong-Sung Kim, C.H. Park,