Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788305 | Current Applied Physics | 2011 | 5 Pages |
Abstract
First-principles density functional theory is employed to study the electrical behavior of oxygen and indium vacancies in indium oxide (In2O3). The oxygen vacancy is found to be a double donor. The indium vacancy is a triple acceptor, which >can be a compensation center in n-type In2O3, leading to n-type carrier reduction. However, its high formation energy under p-type conditions makes it unlikely to be a source of p-type carriers by itself.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Pakpoom Reunchan, Xin Zhou, Sukit Limpijumnong, Anderson Janotti, Chris G. Van de Walle,