| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1788315 | Current Applied Physics | 2011 | 4 Pages |
Abstract
⺠For nonvolatile memory, ferroelectric film as storage medium need to be patterned, which is important for device isolation and parasitic capacitance reduction. ⺠So far, it is hard to pattern polymer film because solvents used in photolithography steps affect to the deposited polymer film. ⺠In this paper, by changing a solubility of photoresist stripper, it was possible to remove photoresist on ferroelectric polymer film. ⺠The solubility was controlled by mixing of strong solvent as acetone and insoluble liquid as water. ⺠Finally, chemical and thermal damage are not found in polarization and voltage relationship, which means the photolithography method is established well.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Woo Young Kim, Du Youn Ka, Il Woong Kwon, Dong Soo Kim, Yong Soo Lee, Sang Youl Kim, Hee Chul Lee,