Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788329 | Current Applied Physics | 2011 | 4 Pages |
Abstract
A more advanced tape structure was designed to improve the thermal-cycling reliability of the semiconductor devices packaged using the LOC die attach technique. The thermal-cycling test indicates that the replacement of the conventional DSAT by the advanced SSAT is very effective for suppressing the propagation of the pre-existing cracks induced at the device edge prior to the reliability test. This is because the complete elimination of the lower-sided adhesive layer can reduce the thermal-cycling induced stress level on the device pattern. Herein, the removal of the lower-sided adhesive layer indicates its substitution with the base layer with many through-holes, which will be infiltrated by the single-sided adhesive material due to capillary action. Thus, if a base layer having a value of CTE close to silicon is adopted, the thermal-cycling reliability of corresponding semiconductor devices will be maximized due to much reduced thermal displacement-induced stress level. Consequently, the present work suggests that the use of a single-sided adhesive tape might offer greater reliability range for the structural modification or material selection of the active pattern in plastic packages.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Seong-Min Lee,