Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788396 | Current Applied Physics | 2010 | 4 Pages |
Abstract
Pd and Pt Schottky diodes on non-polar a-plane (11–20) GaN layers show large increases in both forward and reverse bias current upon exposure to 4% H2 in N2. The barrier height reduction due to hydrogen exposure is 0.11 eV for Pd/GaN and 0.14 eV for Pt/GaN, with long recovery times (>25 min) at room temperature. The sensitivity to hydrogen is significantly greater than for diodes on conventional c-plane (Ga-polar) GaN, but less than for c-plane (N-polar) material. The diode characteristics remain rectifying after exposure to hydrogen, unlike the case of N-polar GaN where Ohmic behavior is observed.
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Authors
Yu-Lin Wang, F. Ren, Wantae Lim, S.J. Pearton, Kwang Hyeon Baik, Sung-Min Hwang, Yong Gon Seo, Soohwan Jang,