Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788499 | Current Applied Physics | 2008 | 5 Pages |
Abstract
Stabilized a-Se films deposited at sufficiently low substrate temperatures are n-like in which electrons can drift but holes are deeply trapped. Such layers can be conveniently incorporated in a multilayer a-Se detector structure to block the injection of holes from the positive electrode. We have shown that a simple double-layer detector structure based on a cold deposited n-layer (which is then annealed) on which an i-like layer is grown can have dark current densities lower than 10â10 A cmâ2 at a field of 10 V/μm. The dark current depends on the thickness of the n-like layer. An a-Se X-ray detector for slot scanning was fabricated by having the i-n a-Se photoconductor structure coated onto a CCD chip. The latter detector was shown to have excellent resolution with a modulation transfer function remaining above 0.5 up to a spatial frequency of 11-14 lp mmâ1.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
George Belev, Safa Kasap, J.A. Rowlands, David Hunter, Martin Yaffe,