Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788555 | Current Applied Physics | 2010 | 5 Pages |
Abstract
We studied the fabrication of stable ink-jet printed organic thin-film transistors (OTFTs) with printed source/drain electrodes. On the top of printed Ag source/drain electrodes, 6, 13-bis(4-pentylphenylethynyl) pentacene was ink-jet printed as an active semiconductor. The printed OTFT exhibited the field-effect mobility of 0.042 cm2/V, an on/off current ratio of 106, a threshold voltage of 2.9 V and the gate voltage swing of 0.6 V/dec. The printed OTFT shows negligible hysteresis in air and stable performance under gate bias stress.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Sun Hee Lee, Sung Hoon Kim, Dong Joon Choo, Jin Jang,