Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788604 | Current Applied Physics | 2010 | 7 Pages |
Abstract
CdO and Al-doped CdO nano-crystalline thin films have been prepared on glass at 300 °C substrate temperature by spray pyrolysis. The films are highly crystalline with grain size (18-32 nm) and found to be cubic structure with lattice constant averaged to 0.46877 nm. Al-doping increased the optical transmission of the film substantially. Direct band gap energy of CdO is 2.49 eV which decreased with increasing Al-doping. The refractive index and dielectric constant varies with photon energy and concentration of Al as well. The conductivity of un-doped CdO film shows metallic behavior at lower temperature region. This behavior dies out completely with doping of Al and exhibits semiconducting behavior for whole measured temperature range. Un-doped and Al-doped CdO is an n-type semiconductor having carrier concentration is of the order of â¼1021 cmâ3, confirmed by Hall voltage and thermo-power measurements.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M.K.R. Khan, M. Azizar Rahman, M. Shahjahan, M. Mozibur Rahman, M.A. Hakim, Dilip Kumar Saha, Jasim Uddin Khan,