Article ID Journal Published Year Pages File Type
1788636 Current Applied Physics 2010 5 Pages PDF
Abstract

Trapped carrier dynamics has been studied on Si3N4Si3N4 nanodots grown by plasma enhanced chemical vapor deposition (PECVD) and on SiO2 nanodots grown by pulsed laser deposition (PLD) on Si wafers. Carrier dynamics can be explained with a model based on Coulomb interaction with the boundary conditions of the nanodot structure. The trapped charge can be estimated quantitatively from the measured trap dynamics, elucidating the electrostatic effect in a small dielectric system.

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Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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