The enhancement of nanocrystallization in amorphous silicon thin films deposited on glass substrate

We have improved nanocrystallization in amorphous silicon thin films deposited on glass. Among the most effective deposition conditions are hydrogenation and the rf-power which provide the optimal condition (i.e., the mixing ratio of reactive gases is Ar:H2 = 1:25 and power density is 6.5 W/cm2), where no longer appears amorphous network but nanocrystals fall to the size of 5 nm as examined by Scherrer formula and the first-order optical phonon spectrum. We also investigated to learn profiles of nanocrystals measured by cross-sectional transmission electron microscopy as well as Raman scattering and X-ray diffraction, and they proved that nanocrystallization evolves out of amorphous network as the amorphous silicon increases its layer.