Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1788748 | Current Applied Physics | 2006 | 4 Pages |
Abstract
InAs/GaAs quantum dot (QD) resonant-cavity avalanche photodetectors (RC-APD) operating at 1 μm were designed and fabricated. The structure of RC-APD was designed such that it would resonate with the light incident from the top mesa. The RC-APD was grown by solid-source molecular-beam epitaxy on a semi-insulating GaAs substrate. The area of the top mesa was 10 × 10 μm2 and the absorbing region consisted of a 2.1 monolayer (ML) InAs QD layer sandwiched by two 75.5 nm-thick GaAs spacers. One of the RC-APDs exhibited a large gain factor M ∼100 and a low dark current of ∼10 nA at a breakdown voltage of ∼20 V.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Dong Ho Kim, Cheong Hyun Roh, Hong Joo Song, Yeon-Shik Choi, Cheol-Koo Hahn, Hoon Kim, Jung Hyuk Koh, Tae Geun Kim,