Effect of p-μc-Si1−xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells

A theoretical analysis using Analysis of Microelectronic and Photonic Structures (AMPS-1D) has been performed to investigate how the widegap p-μc-Si1−xOx:H influences the hetero-junction μc-Si:H solar cells. We observed that the open-circuit voltage (Voc) depends on the bandgap of p-layer. Using wide bandgap p-layer can reduce recombination at p-layer and p/i interface. Moreover, we also have studied the effect of light intensity on the performance of hetero-junction μc-Si:H solar cells. From simulation result, it was confirmed that the Voc logarithmically increases with increasing the light intensity. Besides, we also observed that the p-layer bandgap strongly influences the light-intensity dependence of hetero-junction μc-Si:H solar cells. The enhancement of Voc (ΔVoc) with increasing light intensity improves as the bandgap of p-layer is increased. Therefore, widegap p-μc-Si1−xOx:H is promising for use as window layer in hetero-junction μc-Si:H solar cells.