| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1788872 | Current Applied Physics | 2010 | 5 Pages |
Abstract
The aim of this work was to study the influence of selenization temperature on the morphological and structural properties of CuIn1−xGaxSe2 (CIGS) polycrystalline thin films prepared by a two-step method. The compound and metallic precursors were deposited sequentially using GaSe, InSe and Cu sources by thermal evaporation. These identical InSe/Cu/GaSe precursors are then selenized with Se vapor in a vacuum system. All the CIGS films showed chalcopyrite structure and presence of secondary phases observed at low temperatures. High temperature treatment led to better crystalline and an increase in grain size. Solar cell devices are fabricated and J–V measurements performed under AM1.5 global solar spectra conditions at 25 °C are presented.
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Physical Sciences and Engineering
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Condensed Matter Physics
Authors
F.B. Dejene,